TIP127 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

DONGGUAN NANJING ELECTRONICS LTD.,
TO-220-3L Plastic-Encapsulate Transistors
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
FEATURES
Medium Power Complementary Silicon Transistors
TO-220-3L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
R_θJc
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature
TIP120
TIP125
60
60
TIP121
TIP126
80
80
5
5
2
62.5
1.92
150
-55to+150
TIP122
TIP127
100
100
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Symbol
Test conditions
V(BR)CBO I_C= 1mA,I_E=0
V_CEO(SUS) I_C= 30mA,I_B=0
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
V_CB= 60 V, I_E=0
V_CB= 80 V, I_E=0
V_CB= 100V, I_E=0
V_CE=30 V, I_B=0
V_CE=40 V, I_B=0
V_CE=50 V, I_B=0
V_EB=5 V, I_C=0
V_CE= 3V, I_C=0.5A
V_CE= 3V, I_C=3 A
I_C=3A,I_B=12mA
I_C=5 A,I_B=20mA
V_CE=3V, I_C=3 A
Cob
V_CB=10V, I_E=0,f=0.1MHz
Min
60
80
100
60
80
100
1000
1000
Unit
V
V
V
A
W
℃/W
℃/W
℃
℃
Max Unit
V
V
0.2
mA
0.5
mA
2
mA
2
4
V
2.5
V
300
pF
200
B,Aug,2012