ST2SC4375U Datasheet, PDF (1/3 Pages) Nanjing International Group Co – NPN Silicon Epitaxial Planar Transistor

ST 2SC4375U
NPN Silicon Epitaxial Planar Transistor
High current application
Absolute Maximum Ratings (T_a = 25℃)
Parameter
Symbol
Value
Unit
Collector Base Voltage
V_CBO
30
V
Collector Emitter Voltage
V_CEO
30
V
Emitter Base Voltage
V_EBO
5
V
Collector Current
Total Power Dissipation
I_C
1.5
A
P_tot
0.5
1¹⁾
W
Junction Temperature
T_J
150
℃
Storage Temperature Range
T_Stg
- 55 to + 150
℃
1) _{When mounted on a 250 mm}2 _{X 0.8 t ceramic substrate.}
Characteristics at T_a = 25℃
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at V_CE = 2 V, I_C = 500 mA
Current Gain Group O h_FE
100
-
200
-
Y
h_FE
160
-
320
-
Collector Base Breakdown Voltage
at I_C = 1 mA
V_(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at I_C = 10 mA
V_(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at I_E = 1 mA
V_(BR)EBO
5
-
-
V
Collector Cutoff Current
at V_CB = 30 V
I_CBO
-
-
100
nA
Emitter Cutoff Current
at V_EB = 5 V
I_EBO
-
-
100
nA
Collector Emitter Saturation Voltage
at I_C = 1.5 A, I_B = 30 mA
V_CE(sat)
-
-
2
V
Base Emitter Voltage
at V_CE = 2 V, I_C = 500 mA
V_BE
-
-
1
V
Transition Frequency
at V_CE = 2 V, I_C = 500 mA
f_T
-
120
-
MHz
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
C_ob
-
-
40
pF
Dated: 26/12/2013 Rev: 01