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| SS8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (NPN) | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
SOT-23
FEATURES
Complimentary to SS8550
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
40
V
25
V
5
V
1.5
A
0.3
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB= 80mA
Transition frequency
VCE=10V, IC= 50mA
fT
100
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
120-200
200-350
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.5
V
1.2
V
MHz
J
300-400
B,Jan,2012
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