SES5VD882 Datasheet, PDF (1/3 Pages) Nanjing International Group Co – ESD Protection Diode

ESD Protection Diode
Feature
100 Watts peak pulse power (tp = 8/20 s)
Tiny SOD882 package
Bidirectional configurations
Protects one I/O port
Low clamping voltage
Low Leakage current
ESD-immunity acc. IEC 61000-4-2 ±8KV contact
±15KV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 24A (8/20 s)
SES5VD882-2B
SOD882
Application
Cell Phone
PDA
Notebook
Digital Cameras
Portable Instrumentation
Audio and video equipment
Schematic Diagram
Absolute Maximum Ratings
(TA=25 , Unless otherwise specified.)
Parameter
Peak Pulse Power (TP=8/20 S)
Peak Pulse Current ( tP = 8/20 S )
Junction Temperature
Storage temperature
Symbol
PPP
IPP
TJ
TSTG
Value
100
8
-55 to +125
-55 to +150
Unit
W
A
Electrical Characteristics
(TA=25 , Unless otherwise specified.)
Parameter
Symbol
Condition
Min
Typ Max Unit
Reverse stand-off Voltage
VRWM
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
8
V
Reverse Leakage Current
IR
VR=5V
1
A
Clamping Voltage
VC
IPP=1A TP=8/20 S
VC
IPP=8A TP=8/20 S
10
V
13
V
Junction Capacitance
CJ
VR=0V,f=1MHz
14
pF
1
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