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| S9014 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN General Purpose Transistors | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
S9014 TRANSISTOR (NPN)
SOT-23
FEATURES
z Complementary to S9015
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J6
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Value
50
45
5
0.1
0.2
150
-55-150
Parameter
Symbol Test conditions
Min
Typ
Unit
V
V
V
A
W
â
â
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=50 V , IE=0
Collector cut-off current
ICEO
VCE=35V , IB=0
Emitter cut-off current
IEBO
VEB= 3V , IC=0
V
0.1
μA
0.1
μA
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
VBE(sat)
fT
IC=100 mA, IB= 5mA
VCE=5V, IC= 10mA
f=30MHz
L
200-450
1
V
150
MHz
H
450-1000
B,Dec,2011
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