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| S9013 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS | |||
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S9013
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the PNP transistor 9012 is
recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
40
30
5
500
625
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 500 mA
Current Gain Group G
hFE
110
H
hFE
190
I
hFE
290
hFE
40
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Bae Breakdown Voltage
at IC = 100 μA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 μA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at VCE = 1 V, IC = 100 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 20 mA
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
VBE
fT
-
-
40
30
5
-
-
-
100
Max.
200
300
380
-
100
100
-
-
-
0.6
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
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