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| S9012 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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S9012
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the NPN transistor 9013 is
recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
40
30
5
500
625
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -VCE = 1 V, -IC = 50 mA
Current Gain Group G
hFE
110
H
hFE
190
I
hFE
290
at -VCE = 1 V, -IC = 500 mA
hFE
40
Collector Base Cutoff Current
at -VCB = 35 V
-ICBO
-
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
Collector Base Breakdown Voltage
at -IC = 100 μA
-V(BR)CBO
40
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
30
Emitter Base Breakdown Voltage
at -IE = 100 μA
-V(BR)EBO
5
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
-VBE
-
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
fT
100
Max.
200
300
380
-
100
100
-
-
-
0.6
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
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