RB551V-30 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RB551V-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Ultra low V_F
• High reliability
Applications
• High frequency rectification switching regulation
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
SA
Top View
Marking Code: "SA"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
at I_F = 500 mA
Reverse Current
at V_R = 20 V
Note: ESD sensitive product handling required.
Symbol
Value
Unit
V_RM
30
V
V_R
20
V
I_O
0.5
A
I_FSM
2
A
T_j
125
O_C
T_s
- 40 to + 125
O_C
Symbol
Max.
Unit
V_F
0.36
V
0.47
I_R
100
µA