PZT3904 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-223 Plastic-Encapsulate Transistors
PZT3904 TRANSISTOR (NPN)
FEATURES
 Low Voltage and Low Current
 Complementary to PZT3906
 General Purpose Amplifier and Switch Application
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
IC
Collector Current
200
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.01mA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.01mA,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
50
nA
Collector cut-off current
ICEX
VCE=30V, VEB=3V
50
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
50
nA
hFE(1) VCE=1V, IC=0.1mA
40
DC current gain
hFE(2)
hFE(3)
VCE=1V, IC=1mA
VCE=1V, IC=10mA
70
100
300
hFE(4) VCE=1V, IC=50mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA
0.2
V
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA
0.65
0.85
V
0.95
V
Transition frequency
fT
VCE=20V,IC=10mA, f=100MHz
300
MHz
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
4
pF
Delay time
Rise time
td
VCC=3V, VBE(off)=0.5V IC=10mA,
tr
IB1= -IB2=1mA
35
ns
35
Storage time
Fall time
ts
VCC=3V, IC=10mA,
tf
IB1=-IB2=1mA
200
ns
50