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| MMBTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor | |||
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MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the PNP transistors
MMBTA92 and MMBTA93 are recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 30 mA
Collector Base Cutoff Current
at VCB = 200 V
at VCB = 160 V
Emitter Base Cutoff Current
at VEB = 6 V
at VEB = 4 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage
at IC = 20 mA, IB = 2 mA
Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 20 V, f = 1 MHz
SOT-23 Plastic Package
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
VCBO
VCEO
VEBO
IC
Ptot
RθJA
Tj, Tstg
Value
300
200
300
200
6
500
350
357
- 55 to + 150
Unit
V
V
V
mA
mW
OC/W
OC
Symbol
hFE
hFE
hFE
MMBTA42
ICBO
MMBTA43
ICBO
MMBTA42
IEBO
MMBTA43
IEBO
MMBTA42
MMBTA43
V(BR)CBO
V(BR)CBO
MMBTA42
MMBTA43
V(BR)CEO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
Min.
25
40
40
-
-
-
-
300
200
300
200
6
-
-
50
Max.
-
-
-
0.1
0.1
0.1
0.1
-
-
-
-
-
0.5
0.9
-
Unit
-
-
-
µA
µA
µA
µA
V
V
V
V
V
V
V
MHz
MMBTA42
Cob
-
MMBTA43
Cob
-
3
pF
4
pF
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