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| MMBT9015 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL SILICON TRANSISTOR | |||
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MMBT9015
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications
As complementary types the NPN transistor
MMBT9014 is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
50
45
5
100
200
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
Current Gain Group B
hFE
110
C
hFE
200
D
hFE
420
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -VCE = 5 V, -IC = 200 µA, f = 1 KHz, RG = 2 Kâ¦
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
COB
NF
-
-
50
45
5
-
-
100
-
-
Max.
220
450
800
50
50
-
-
-
0.65
1
-
7
10
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
dB
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