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| MMBT9013 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION | |||
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MMBT9013
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications.
As complementary types the PNP transistor
MMBT9012 is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
40
30
5
500
200
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 500 mA
Current Gain Group G
hFE
100
H
hFE
160
hFE
40
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
Collector Bae Breakdown Voltage
at IC = 100 μA
V(BR)CBO
40
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
30
Emitter Base Breakdown Voltage
at IE = 100 μA
V(BR)EBO
5
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VBE(sat)
-
Base Emitter Voltage
at VCE = 1 V, IC = 100 mA
VBE
-
Gain Bandwidth Product
at VCE = 6 V, IC = 20 mA
fT
100
Max.
250
400
-
100
100
-
-
-
0.6
1.2
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
V
MHz
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