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| MMBT8550-1.5A Datasheet, PDF (1/2 Pages) Nanjing International Group Co – PNP Silicon Epitaxial Planar Transistor | |||
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MMBT8550 (1.5A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
As complementary type the NPN transistor
MMBT8050 (1.5A) is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SOT-23 Plastic Package
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
40
25
6
1.5
350
150
- 55 to + 150
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 800 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 800 mA, -IB = 80 mA
Base Emitter Saturation Voltage
at -IC = 800 mA, -IB = 80 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 10 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA
Symbol
MMBT8550C
MMBT8550D
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
Min.
100
160
40
-
-
40
25
6
-
-
-
120
Max.
250
400
-
100
100
-
-
-
0.5
1.2
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
V
MHz
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