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| MMBT8050 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBT8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the PNP transistor
MMBT8550 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
40
25
6
600
350
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Symbol Min.
MMBT8050C hFE
MMBT8050D hFE
hFE
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
100
160
40
-
40
25
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
Max.
250
400
-
100
-
-
-
0.5
1.2
-
Unit
-
-
-
nA
V
V
V
V
V
MHz
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