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| MMBT8050-1.5A Datasheet, PDF (1/2 Pages) Nanjing International Group Co – NPN Silicon Epitaxial Planar Transistor | |||
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MMBT8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 800 mA
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Voltage
at VCE = 1 V, IC = 10 mA
Gain Bandwidth Product
at VCE = 10 V, IC = 50 mA
SOT-23 Plastic Package
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
40
25
6
1.5
350
150
- 55 to + 150
V
V
V
A
mW
OC
OC
Symbol
MMBT8050C
hFE
MMBT8050D
hFE
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
VBE(on)
fT
Min.
100
160
40
-
-
40
25
6
-
-
-
120
Max.
250
400
-
100
100
-
-
-
0.5
1.2
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
V
MHz
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