MMBT7002 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – N-Channel Enhancement Mode Field Effect Transistor

MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features
• High density cell design for low R_DS(ON)
• Voltage controlled small signal switching
• High saturation current capability
Gate
• High speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R_GS ≤ 1MΩ)
Gate-Source Voltage
-Continuous
-Non Repetitive (tp < 50 µs)
Maximum Drain Current -Continuous
-Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
Drain
Source
Symbol
V_DSS
V_DGR
V_GSS
I_D
P_tot
T_J, T_s
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
Value
Unit
60
V
60
V
± 20
V
± 40
115
mA
800
200
mW
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
Drain Source Breakdown Voltage
at I_D = 10 µA
BV_DSS
60
-
V
Zero Gate Voltage Drain Current
at V_DS = 60 V
I_DSS
-
1
µA
Gate-Body Leakage Current
at V_GS = ± 20 V
±I_GSS
-
100
nA
Gate Threshold Voltage
at V_DS = V_GS, I_D = 250 µA
V_GS(th)
1
2.5
V
On-State Drain Current
at V_GS = 10 V, V_DS = 7.5 V
I_D(ON)
500
-
mA
Drain-Source On-Voltage
at V_GS = 10 V, I_D = 500 mA
at V_GS = 5 V, I_D = 50 mA
V_DS(ON)
-
-
3.75
V
1.5
V
Static Drain-Source On-Resistance
at V_GS = 10 V, I_D = 500 mA
R_DS(ON)
-
7.5
Ω
Forward Transconductance
at V_DS = 10 V, I_D = 200 mA
g_FS
80
-
mS
Input Capacitance
at V_DS = 25 V, f = 1 MHz
C_iss
-
50
pF
Output Capacitance
at V_DS = 25 V, f = 1 MHz
C_oss
-
25
pF
Reverse Transfer Capacitance
at V_DS = 25 V, f = 1 MHz
C_rss
-
5
pF
Turn-On Time
at V_DD = 30 V, R_L= 150 Ω, I_D = 0.2 A, V_GS = 10V, R_GEN = 25Ω
t_on
-
20
ns
Turn-Off Time
at V_DD = 30 V, R_L= 150 Ω, I_D = 0.2 A, V_GS = 10V, R_GEN = 25Ω
t_off
-
20
ns