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| MMBT2907A Datasheet, PDF (1/1 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
MMBT2907A TRANSISTOR (PNP)
SOT-23
FEATURES
z Epitaxial planar die construction
z Complementary NPN Type available(MMBT2222A)
Marking: 2F
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
-60
-60
-5
-600
250
500
150
-55 to +150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-10μA,IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO* IC=-10mA,IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
-5
Collector cut-off current
ICBO
VCB=-50V,IE=0
Base cut-off current
IEBO
VEB=-3V, IC =0
Collector cut-off current
ICEX
VCE=-30 V, VBE(off) =-0.5V
hFE(1)
VCE=-10V,IC=-150mA
100
hFE(2)
VCE=-10V,IC=-0.1mA
75
DC current gain
hFE(3)
VCE=-10V,IC=-1mA
100
hFE(4)
VCE=-10V,IC=-10mA
100
hFE(5)
VCE=-10V,IC=-500mA
50
Collector-emitter saturation voltage
VCE(sat)*
VCE(sat)*
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)*
VBE(sat)*
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Transition frequency
fT
VCE=-20V,IC=-50mA,f=100MHz 200
Delay time
Rise time
td
tr
VCE=-30V,IC=-150mA,B1=-15mA
Storage time
Fall time
tS
VCE=-6V,IC=-150mA,
tf
IB1=- IB2=- 15mA
*Pulse test: tpâ¤300μs, δâ¤0.02.
Typ Max Unit
V
V
V
-20
nA
-10
nA
-50
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
10
ns
25
ns
225
ns
60
ns
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