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| MMBD914 Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – HIGH-SPEED SWITCHING DIODE | |||
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MMBD914
Silicon Epitaxial Planar Switching Diode
Features
⢠Small package
⢠Low forward voltage
⢠Fast reverse recovery time
⢠Small total capacitance
Applications
⢠Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Forward Current
Non-repetitive Peak Forward Surge Current (t = 1 μs)
Power Dissipation
Junction Temperature
Storage Temperature Range
3
12
Marking Code: 5D
SOT-23 Plastic Package
Symbol
Value
Unit
VR
100
V
IF
200
mA
IFSM
4
A
Ptot
350
mW
Tj
150
OC
Tstg
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Breakdown Voltage
at IR = 100 µA
Reverse Current
at VR = 20 V
at VR = 75 V
Reverse Recovery Time
at IF = IR = 10 mA
Total Capacitance
at VR = 0 , f = 1 MHz
Symbol
Min.
Max.
Unit
VF
-
1
V
V(BR)R
100
-
V
IR
-
25
nA
-
5
µA
trr
-
4
ns
CT
-
4
pF
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