MMBD4148 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

MMBD4148 / SE / CC / CA
Silicon Epitaxial Planar Switching Diode
4148
3
4148SE
3
4148CC
3
4148CA
3
12
12
12
12
MMBD4148 Marking Code: 5D
MMBD4148SE Marking Code: A7
MMBD4148CC Marking Code: A4
MMBD4148CA Marking Code: A1
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Maximum Repetitive Reverse Voltage
Reverse Voltage
V_RRM
100
V
V_R
75
V
Average Rectified Forward Current
I_F(AV)
200
mA
DC Forward Current
I_FM
600
mA
Recurrent Peak Forward Current
I_FRM
700
mA
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 μs
I_FSM
1
2
A
Total Device Dissipation
P_tot
350
mW
Operating Junction Temperature
Storage Temperature Range
T_j
150
O_C
T_stg
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Breakdown Voltage
at I_R = 100 µA
at I_R = 5 µA
Reverse Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_a = 150 ^OC
Reverse Recovery Time
at I_F = 10 mA, V_R = 6 V, I_RR = 1 mA, R_L = 100 Ω
Total Capacitance
at V_R = 0 V, f = 1 MHz
Symbol
Min.
Max.
Unit
V_F
-
1
V
V_(BR)R
100
-
V
75
-
I_R
-
-
25
nA
5
µA
-
50
µA
t_rr
-
4
ns
C_T
-
4
pF