MCL4448 Datasheet, PDF (1/2 Pages) Formosa MS – Switching Diode - Silicon epitaxial planar type

MCL4448
Silicon Epitaxial Planar Switching Diode
Fast switching diode in MiniMELF case especially
suited for automatic surface mounting.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Surge Forward Current at t < 1 s
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 5 mA
at I_F = 100 mA
Reverse Leakage Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_j = 150 ^OC
Reverse Breakdown Voltage
at I_R = 100 µA
Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA to I_R = 1 mA, V_R = 6 V, R_L = 100 Ω
LS-31
Symbol
V_RM
V_R
I_F(AV)
I_FSM
P_tot
T_j
T_stg
Glass Case MicroMELF
Value
Unit
100
V
75
V
150
mA
500
mA
500
mW
175
O_C
- 65 to + 175
O_C
Symbol
Min.
Max.
Unit
V_F
0.62
0.72
V
-
1
I_R
-
25
nA
I_R
-
5
µA
I_R
-
50
µA
V_(BR)R
100
-
V
C_tot
-
4
pF
t_rr
-
4
ns