MBL1S Datasheet, PDF (1/2 Pages) Nanjing International Group Co – Bridge Rectifier

MBL1S THRU MBL10S
Bridge Rectifier
■特征 Features
● Io
0.8A
● V_RRM
100V~1000V
● 玻璃钝化芯片
Glass passivated chip
● 耐正向浪涌电流能力高
High surge forward current capability
■外形尺寸 Outline Dimensions and Mark
MBLS
.014(0.35)
.006(0.15)
.157(4.50) .268(6.50)
.142(3.60) .283(7.20)
.008(0.20)
MAX
■用途 Applications
● 作一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
.102(2.60)
.087(2.20)
.193(5.00)
.177(4.50)
.043(1.10)
.028(0.70)
.059(1.50)
.051(1.30)
.063(1.60)
.055(1.40)
■极限值（绝对最大额定值）
.033(0.84)
.022(0.56)
Dimensions in inches and (millimeters)
Limiting Values_（Absolute Maximum Rating _）
参数名称
符号 单位
条件
MBL
Item
Symbol Unit
Conditions
1S 2S 4S 6S
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
100 200 400 600
60Hz正弦波， _{安装在氧化铝基板上}
平均整流输出电流
电阻负载，
On alumina substrate
0.8
Average Rectified Output
IO
A
Ta=25℃
Current
60Hz sine wave, ^{安装在玻璃-环氧基板上}
R-load, Ta=25℃ ^{On glass-epoxi substrate}
0.5
正向（不重复）浪涌电流
Surge(Non-
IFSM
A
repetitive)Forward Current
60HZ正弦波，一个周期，Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
35
正向浪涌电流的平方对电流
浪涌持续时间的积分值
Current Squared Time
I²t
A²S
1ms≤t<8.3ms Tj=25℃，单个二极管
1ms≤t<8.3ms Tj=25℃，Rating of per diode
5.1
存储温度
Storage Temperature
Tstg
℃
-55 ~+150
结温
Junction Temperature
Tj
℃
-55 ~+150
8S 10S
800 1000
■电特性 （Ta=25℃ 除非另有规定）
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
参数名称
Item
符号 单位
Symbol U^μnit
测试条件
Test Condition
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
VFM
V
IRRM
A
IFM=0.4A, 脉冲测试，单个二极管的额定值
IFM=0.4A, Pulse measurement, Rating of per diode
VRM=VRRM ,脉冲测试，单个二极管的额定值
VRM=VRRM , Pulse measurement, Rating of per diode
结和环境之间，安装在氧化铝基板上
热阻
Thermal Resistance
RθJ-A
RθJ-L
℃/W
Between junction and ambient, On alumina substrate
结和环境之间，安装在玻璃-环氧基板上
Between junction and ambient, On glass-epoxi substrate
结和引线之间
Between junction and lead
最大值
Max
1.0
10
76
134
20
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