LL4448 Datasheet, PDF(1/3 Page) Semtech Corporation – Silicon Expitaxial Planar Diode　

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LL4448 Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Expitaxial Planar Diode　

LL4448

Silicon Epitaxial Planar Switching Diode

Fast switching diode in MiniMELF case especially suited for

automatic surface mounting.

Identical electrically to standard 1N4448.

LL-34

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

VRM

100

Reverse Voltage

Average Rectified Forward Current

IF(AV)

150

Surge Forward Current at t < 1 s

Power Dissipation

IFSM

500

Ptot

500 1)

Junction Temperature

175

Storage Temperature Range

Tstg

- 65 to + 175

1) Valid provided that electrodes are kept at ambient temperature.

Characteristics at Ta = 25 OC

Parameter

Forward Voltage

at IF = 5 mA

at IF = 100 mA

Reverse Leakage Current

at VR = 20 V

at VR = 75 V

at VR = 20 V, Tj = 150 OC

Reverse Breakdown Voltage

at IR = 100 ÂµA

Capacitance

at VR = 0, f = 1 MHz

Reverse Recovery Time

at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 â¦

Symbol

Min.

Max.

Unit

0.62

0.72

ÂµA

V(BR)R

100

Ctot

trr

▷