KAT1273 Datasheet, PDF (1/1 Pages) Nanjing International Group Co – Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
KTA1273 TRANSISTOR (PNP)
FEATURES
z High Current
z Low Voltage
z Complementary to KTC3205
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C=-1mA,I_E=0
I_C=-10mA,I_B=0
I_E=-1mA,I_C=0
V_CB=-30V,I_E=0
V_EB=-5V,I_C=0
V_CE=-2V, I_C=-0.5A
I_C=-1.5A,I_B=-30mA
V_CE=-2V, I_C=-500mA
VCE=-2V,IC=-500mA
V_CB=-10V, I_E=0, f=1MHz
Min Typ
-30
-30
-5
100
120
48
Max
-100
-100
320
-2
-1
Unit
V
V
V
nA
nA
V
V
MHz
pF
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
O
100–200
1273
Y
160–320
A,Nov,2010