HZ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Hermetically Sealed Ultra High Precision Z-Foil Technology Resistors with TCR of ± 0.2 ppm/°C, Tolerance of ± 0.001 % and

HZ Series
Silicon Epitaxial Planar Zener Diodes
for stabilized power supply
Features
• Low leakage, low zener impedance and maximum
power dissipation of 500 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 1.6 V through 38 V of zener
voltage provide flexible application.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P_tot
T_j
T_stg
Glass Case DO-35
Dimensions in mm
Value
Unit
500
mW
175
O_C
- 55 to + 175
O_C
Characteristics at T_a = 25 ^OC (V_F = 1 V Max. at I_F = 100 mA)
Zener Voltage ¹⁾
Reverse Leakage Current
Type
V_Z
at l_ZT
I_R
at V_R
Min. (V) Max. (V)
(mA)
Max. (µA)
(V)
HZ2A1
1.6
1.8
5
25
0.5
HZ2A2
1.7
1.9
5
25
0.5
HZ2A3
1.8
2
5
25
0.5
HZ2B1
1.9
2.1
5
5
0.5
HZ2B2
2
2.2
5
5
0.5
HZ2B3
2.1
2.3
5
5
0.5
HZ2C1
2.2
2.4
5
5
0.5
HZ2C2
2.3
2.5
5
5
0.5
HZ2C3
2.4
2.6
5
5
0.5
HZ3A1
2.5
2.7
5
5
0.5
HZ3A2
2.6
2.8
5
5
0.5
HZ3A3
2.7
2.9
5
5
0.5
HZ3B1
2.8
3
5
5
0.5
HZ3B2
2.9
3.1
5
5
0.5
HZ3B3
3
3.2
5
5
0.5
HZ3C1
3.1
3.3
5
5
0.5
HZ3C2
3.2
3.4
5
5
0.5
HZ3C3
3.3
3.5
5
5
0.5
HZ4A1
3.4
3.6
5
5
1
HZ4A2
3.5
3.7
5
5
1
HZ4A3
3.6
3.8
5
5
1
HZ4B1
3.7
3.9
5
5
1
HZ4B2
3.8
4
5
5
1
HZ4B3
3.9
4.1
5
5
1
HZ4C1
4
4.2
5
5
1
HZ4C2
4.1
4.3
5
5
1
Dynamic Resistance
Z_ZT
Max. (Ω)
at l_ZT
(mA)
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5