CZT3055 Datasheet, PDF (1/1 Pages) Nanjing International Group Co – High Current

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-223 Plastic-Encapsulate Transistors
CZT3055 TRANSISTOR (NPN)
FEATURES
 High Current
 Low Voltage
 Complement to CZT2955
 Surface Mounted Power Amplifier Application
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
7
IC
Collector Current
6
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0
60
Collector-emitter breakdown voltage V(BR)CER IC=30mA,RBE=100Ω
70
Collector cut-off current
ICEO
VCE=30V,IB=0
ICEV
VCE=100V,VEB=1.5V
Emitter cut-off current
IEBO
VEB=7V,IC=0
DC current gain
hFE(1) VCE=4V, IC=4A
20
hFE(2) VCE=4V, IC=6A
5
Collector-emitter saturation voltage
VCE(sat) IC=4A,IB=400mA
Base-emitter voltage
VBE
VCE=4V, IC=4A
Transition frequency
fT
VCE=10V,IC=500mA, f=1MHz
2.5
Max
700
1
5
70
1.1
1.5
Unit
V
V
μA
mA
mA
V
V
MHz