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| CSH13003H6D Datasheet, PDF (1/2 Pages) Nanjing International Group Co – power switching applications | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
72 3ODVWLF(QFDSVXODWH 7UDQVLVWRUV
CSH13003H6D TRANSISTOR (NPN)
TO-126
FEATURES
· power switching applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
1.5
150
-55-150
Units
V
V
V
A
W
â
â
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
Test conditions
IC =5mA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=2mA, IC=0
Collector cut-off current
ICBO
VCB=700V,IE=0
Collector cut-off current
ICEO
VCE=400V,IB=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
hFE1
hFE2
VCE=5V, IC= 0.5 A
VCE=5V, IC= 1.5A
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.25A
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.25A
Transition frequency
fT
VCE=10V,Ic=100mA, f =1MHz
Fall time
tf
Storage time
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
IC=1A, IB1=-IB2=0.2A, VCC=100V
tS
IC=250mA (UI9600)
20-25
25-30
MIN TYP MAX UNIT
700
V
400
V
9
V
1
mA
0.5
mA
1
mA
8
40
5
0.6
V
1.2
V
5
MHz
0.5
µs
2
4
μs
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
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