 English |
|
|
|
|
|
|
|
| C1815 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN | |||
| |||
|
DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
C1815 TRANSISTOR (NPN)
SOT-23
FEATURES
Power dissipation
MARKING : HF
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Value
60
50
5
150
200
150
-55-150
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V(BR)CBO IC= 100uA, IE=0
V(BR)CEO IC= 0.1mA, IB=0
ICBO
VCB=60V, IE=0
ICEO
VCE=50V, IB=0
IEBO
VEB= 5V, IC=0
hFE
VCE= 6V, IC= 2mA
VCE(sat)
IC=100mA, IB= 10mA
VBE(sat)
fT
IC=100mA, IB= 10mA
VCE=10V, IC= 1mA,
f=30MHz
Min
Typ
60
50
130
80
Unit
V
V
V
mA
mW
â
â
Max Unit
V
V
0.1
uA
0.1
uA
0.1
uA
400
0.25
V
1
V
MHz
CLASSIFICATION OF h FE
Rank
Range
L
130-200
H
200-400
B,Mar,2012
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese