BSS84 Datasheet, PDF (1/5 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate MOSFETs
BSS84 P-CHANNEL MOSFET
V_(BR)DSS
-50 V
R_DS(on)MAX
8Ω@-10V
10Ω@ -5V
I_D
-0.13A
SOT-23
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve
energy, making this device ideal for use in small power management circuitry.
FEATURE
z Energy Efficient
z Low Threshold Voltage
z High-speed Switching
z Miniature Surface Mount Package Saves Board Space
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z DC−DC converters,load switching, power management in portable and battery−powered products such
as computers, printers, cellular and cordless telephones.
MARKING
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1) @tp <10 μs
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Maximum Lead Temperature for Soldering Purposes , Duration
T_L
for 5 Seconds
Value
-50
±20
-0.13
-0.52
225
556
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
1
A-5,Jun,2014