BD135 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

DONGGUAN NANJING ELECTRONICS LTD.,
TO-126 Plastic-Encapsulate Transistors
BD135/BD137/BD139 TRANSISTOR (NPN)
FEATURES
·High Current(1.5A)
·Low Voltage(80V)
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted )
Symbol
Parameter
BD135
Value
BD137
BD139
VCBO
Collector-Base Voltage
45
60
80
VCEO
Collector-Emitter Voltage
45
60
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current -Continuous
1.5
PC
Collector power dissipation
1.25
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 ℃unless otherwise specified)
Units
V
V
V
A
W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
*PULSE TEST
CLASSIFICATION OF hFE(2)
Rank
Symbol
Test conditions
V(BR)CBO Ic=100µA,IE=0
BD135
BD137
BD139
BD135
V(BR)CEO* _Ic=30mA,IB=0
BD137
BD139
V(BR)EBO IE=100µA,IC=0
ICBO
VCB=30V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=2V,IC=5mA
hFE(2) VCE=2V,IC=150mA
hFE(3) VCE=2V,IC=500mA
VCE(sat) IC=500mA,IB=50mA
VBE VCE=2V,IC=500mA
MIN TYP MAX UNIT
45
60
V
80
45
60
V
80
5
V
0.1 µA
10 µA
25
40
250
25
0.5
V
1
V
Range
40-100
100-200
200-300