BC635 Datasheet, PDF (1/3 Pages) Motorola, Inc – High Current Transistors

BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors
for driver stages of audio / video amplifiers
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1.Emitter 2.Collector 3.Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
BC635
45
BC637
V_CBO
60
V
BC639
100
BC635
45
BC637
V_CEO
60
V
BC639
80
V_EBO
5
V
I_C
1
A
I_CM
1.5
A
I_B
100
mA
I_BM
200
mA
P_tot
830
mW
T_j
150
O_C
T_S
- 55 to + 150
O_C