BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAW56/BAV70/BAV99 SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
SOT-23
BAW56 Marking: A1
BAV70 Marking: A4
BAV99 Marking: A7
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V_R
I_F
I_FM(surge)
P_D
R_θJA
T_J
T_STG
Limit
70
200
500
225
556
150
-55~+150
Unit
V
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min Typ Max Unit
Conditions
V_R
70
V I_R=100μA
V_F1
0.715
V I_F=1mA
V_F2
0.855
V
I_F=10mA
V_F3
1
V I_F=50mA
V_F4
1.25
V I_F=150mA
I_R
2.5
μA V_R=70V
C_T
1.5
pF V_R=0,f=1MHz
I_F = I_R = 10mA,
t _rr
6
ns
Irr= 0.1 x I_R, R_L = 100Ω
A,May,2011