BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99
Silicon Epitaxial Planar Switching Diode
Fast switching in thick and thin-film circuits diode
3
12
Marking Code: A7
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V_RRM
85
V
Continuous Reverse Voltage
V_R
75
V
Continuous Forward Current (Double Diode Loaded)
I_F
125
mA
Continuous Forward Current (Single Diode Loaded)
I_F
215
mA
Repetitive Peak Forward Current
I_FRM
450
mA
Non-repetitive Peak Forward Surge Current at t = 1 s
0.5
at t = 1 ms
I_FSM
1
A
at t = 1 μs
4.5
Power Dissipation
P_tot
350
mW
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_stg
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_j = 150 ^OC
at V_R = 75 V, T_j = 150 ^OC
Diode Capacitance
at V_R = 0 , f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_R = 1 mA, R_L = 100 Ω
Symbol
Max.
Unit
0.715
V_F
0.855
V
1
1.25
30
nA
I_R
1
µA
30
µA
50
µA
C_d
1.5
pF
t_rr
4
ns