BAV74 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV74
Silicon Epitaxial Planar Switching Diode
Applications
• Ultra high speed switching application
3
12
Marking Code: A4
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V_RRM
60
V
Continuous Reverse Voltage
V_R
50
V
Forward Current (DC)
Single Diode Loaded
Double Diode Loaded
I_FSM
215
125
mA
Repetitive Peak Forward Current
I_FRM
450
mA
Non-repetitive Peak Forward Surge Current at t = 1 s
0.5
at t = 1 ms
I_FSM
1
A
at t = 1 μs
4
Power Dissipation
P_d
350
mW
Operating Junction Temperature Range
T_j
150
O_C
Storage Temperature Range
T_stg
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 50 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 50 V, T_J = 150 ^OC
Diode Capacitance
at V_R = 0 , f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA to I_R = 1 mA, R_L = 100 Ω
Symbol
Max.
Unit
V_F
715
mV
V_F
855
mV
V_F
1
V
V_F
1.25
V
I_R
30
nA
I_R
0.1
µA
I_R
30
µA
I_R
100
µA
C_d
2
pF
t_rr
4
ns