BAV23S Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose double diode

BAV23S
Surface Mount Switching Diode
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: JS4
Weight: 0.008 gram (approx.)
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
BAV23S
Repetitive Peak Reverse Voltage
VRRM
250
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
200
RMS Reverse Voltage
VR(RMS)
141
Forward Continuous Current (Note 1)
IFM
400
Average Rectifier Output Current (Note 1)
Io
200
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=100uS
IFSM
9.0
3.0
@ t=10mS
1.7
Repetitive Peak Forward Surge Current
IFRM
625
Power Dissipation (Note 1)
Pd
350
Thermal Resistance Junction to Ambient Air
(Note 1)
RθJA
357
Operating and Storage Temperature Range
Electrical Characteristics
T_J, T_STG
-65 to + 150
Type Number
Symbol
Min
Max
Forward Voltage
IF=100mA
IF=200mA
VF
_
1.0
1.25
Peak Reverse Current Current Tj=25℃
Tj=100℃
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
IR
_
100
100
Cj
_
5.0
trr
_
50
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
Units
V
V
V
mA
mA
A
mA
mW
K/W
O_C
Units
V
nA
uA
pF
nS