BAS70WS Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY DIODE

DONGGUAN NANJING ELECTRONICS LTD.,
SOD-323 Plastic-Encapsulate Diodes
BAS70WS
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
SOD-323
Unit:mm
1.70
2.65
Maximum Ratings and Electrical Characteristics, Single Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t_p < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F
I_FSM
P_d
R_qJA
T_j
T_STG
BAS70
70
49
70
100
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
K/W
°C
°C
Electrical Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
70
V_F
—
IRM
¾
C_j
¾
t_rr
—
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
Max
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
IR=10uA
tp <300µs, IF = 1.0mA
t_p <300µs, I_F = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
R_L =100W
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