BAS70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70 / -04 / -05 / -06
Surface Mount Schottky Barrier Diode
Features
• Low turn-on voltage
• Fast switching
• PN junction guard ring for transient and ESD protection
BAS70
3
BAS70-04
3
BAS70-05
3
BAS70-06
3
12
12
12
12
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current (t < 10 ms)
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature Range
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 15 mA
Reverse Breakdown Voltage
at I_R = 10 µA
Reverse Current
at V_R = 50 V
Total Capacitance
at V_R = 0 , f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA to I_R = 1 mA, R_L = 100 Ω
SOT-23 Plastic Package
BAS70 Marking Code: 73
BAS70-04 Marking Code: 74
BAS70-05 Marking Code: 75
BAS70-06 Marking Code: 76
Symbol
V_RRM
V_RSM
V_R
I_F(AV)
I_FSM
P_D
R_θJA
T_j
T_stg
Value
70
70
70
70
100
200
625
- 55 to + 125
- 65 to + 150
Unit
V
V
V
mA
mA
mW
O_C/W
O_C
O_C
Symbol
Min.
Max.
Unit
V_F
-
0.41
V
-
1
V_(BR)R
70
-
V
I_R
-
100
nA
C_T
-
2
pF
t_rr
-
5
ns