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| B772 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
B772 TRANSISTORï¼PNPï¼
FEATURE
Low speed switching
SOT-89-3L
MARKING:B772
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÓ¨JA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value Unit
-40
V
-30
V
-6
V
-3
A
0.5
W
250 â/W
150
â
-55~150 â
1. BASE
2. COLLETOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Transition frequency
fT
Test conditions
IC=-100μA ,IE=0
IC= -10mA , IB=0
IE= -100μA,IC=0
VCB= -40V, IE=0
VCE=-30V, IB=0
VEB=-6V, IC=0
VCE= -2V, IC= -1A
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
f =10MHz
Min
Typ
-40
-30
-6
60
50
123
Max
-1
-10
-1
400
-0.5
-1.5
Unit
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
C,Dec,2013
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