B5817WS Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

DONGGUAN NANJING ELECTRONICS LTD.,
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING:
B5817WS:SJ
B5818WS:SK
B5819WS:SL
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-repetitive Peak Forward Surge Current
@t=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to
ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
I_FRM
Pd
R_θJA
TJ
T_STG
B5817WS
20
20
14
B5818WS B5819WS
30
40
30
40
21
28
1

1.5
250
400
125
-55~+150
Unit
V
V
V
A
A
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unles s other wise specified)
Pa rameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test c onditions
Min
I_R= 1mA
V_(BR)
B5817WS
20
B5818WS
30
B5819WS
40
V_R=20V
B5817WS
I_R
V_R=30V
B5818WS
V_R=40V
B5819WS
B5817WS I_F=1A
I_F=3A
V_F
B5818WS I_F=1A
I_F=3A
B5819WS I_F=1A
I_F=3A
C_D
V_R=4V, f=1MHz
Max
1
0.45
0.75
0.55
0.875
0.6
0.9
120
Unit
V
mA
V
V
V
pF
1
C,Oct,2014