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| B5817WS-1A-SOD-323 Datasheet, PDF (1/3 Pages) Nanjing International Group Co – SOD-323 Plastic-Encapsulate Diodes | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING:
B5817WS:SJ
B5818WS:SK
B5819WS:SL
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25â
Parameter
Symbol B5817WS B5818WS B5819WS
Non-repetitive peak reverse voltage
VRM
20
30
40
Peak repetitive peak reverse voltage
VRRM
Working peak reverse voltage
DC blocking voltage
VRWM
20
30
40
VR
RMS reverse voltage
VR(RMS)
14
21
28
Average rectified output current
IO
1
1RQUHSHWLWLYH3HDNForward 6XUJH&urrent
#W PV
IFSM
9
Repetitive peak forward current
IFRM
1.5
Power dissipation
Pd
250
Thermal resistance junction to
ambient
RθJA
400
Junction temperature
TJ
125
Storage temperature
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
IR= 1mA
V(BR)
B5817WS
20
B5818WS
30
B5819WS
40
VR=20V
B5817WS
IR
VR=30V
B5818WS
VR=40V
B5819WS
B5817WS IF=1A
IF=3A
VF
B5818WS IF=1A
IF=3A
B5819WS IF=1A
IF=3A
1
0.45
0.75
0.55
0.875
0.6
0.9
Diode capacitance
CD
VR=4V, f=1MHz
120
Unit
V
V
V
A
A
A
mW
â/W
â
â
Unit
V
mA
V
V
V
pF
1
E,Mar,2015
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