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| A92 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ） | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR (PNP)
FEATURES
High voltage
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-300
VCEO Collector-Emitter Voltage
-300
VEBO Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-200
ICM Collector Current -Pulsed
PC Collector Power Dissipation
-500
625
Tj
Junction Temperature
150
Tstg Storage Temperature
-55-150
RÓ¨JA Thermal Resistance, Junction to Ambient
200
RÓ¨JC Thermal Resistance, Junction to Case
83.3
Units
V
V
V
mA
mA
mW
â
â
â/mW
â/mW
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
-300
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-300
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB= -200 V, IE=0
Emitter cut-off current
IEBO
VEB= -5 V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE= -10 V, IC=- 1 mA
60
VCE= -10V, IC = -10 mA
80
hFE(3)
VCE= -10 V, IC= -80 mA
60
Collector-emitter saturation voltage
VCE(sat) IC= -20 mA, IB= -2 mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -20 mA, IB= -2 mA
fT
VCE= -20 V, IC= -10 mA
f = 30MHz
50
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
Max
Unit
V
V
V
-0.25
μA
-0.1
μA
250
-0.2
V
-0.9
V
MHz
C
200-250
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