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| A42 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR (NPN)
TO-92
FEATURES
High voltage
1. EMITTER
2. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
3. COLLECTOR
VCBO
Collector-Base Voltage
300
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
RÓ¨JA
Thermal Resistance, junction to Ambient
200
â/mW
RÓ¨JC
Thermal Resistance, unction to Case
83.3
â/mW
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
300
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
300
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=200V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
hFE(1) VCE=10V, IC=1mA
60
DC current gain
hFE(2) VCE=10V, IC=10mA
80
hFE(3) VCE=10V, IC=30mA
75
Collector-emitter saturation voltage
VCE(sat) IC=20mA, IB=2mA
Base-emitter saturation voltage
VBE(sat) IC=20mA, IB=2mA
Transition frequency
fT
VCE=20V, IC=10mA,f=30MHZ
50
Max Unit
V
V
V
0.25 μA
0.1
μA
250
0.2
V
0.9
V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
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