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8050-1.5A Datasheet, PDF (1/2 Pages) Nanjing International Group Co – NPN Silicon Epitaxial Planar Transistor
8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 5 mA
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 800 mA
Collector Cutoff Current
at VCB = 35 V
Emitter Cutoff Current
at VBE = 6 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Voltage
at IC = 10 mA, VCE = 1 V
Gain Bandwidth Product
at VCE = 10 V, IC = 50 mA
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 019g
Value
Unit
40
V
25
V
6
V
1.5
A
1
W
150
OC
- 55 to + 150
OC
Symbol Min.
hFE
45
8050C hFE
120
8050D hFE
160
hFE
40
ICBO
-
IEBO
-
V(BR)CBO
40
V(BR)CEO
25
V(BR)EBO
6
VCE(sat)
-
VBE(sat)
-
VBE
-
fT
120
COB
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
15
Max.
-
200
300
-
100
100
-
-
-
0.5
1.2
1
-
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
 ▷