2SD966 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

2SD966
NPN Silicon Epitaxial Planar Transistor
for low-frequency power amplification and
stroboscope.
The transistor is subdivided into three groups P, Q
and R, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25^OC)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Peak Collector Current
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
V_CBO
40
V
V_CEO
20
V
V_EBO
7
V
I_CP
8
A
I_C
5
A
Pc
1
W
T_j
150
O_C
T_S
-55 to +150
O_C