2SD965 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

2SD965
NPN Silicon Epitaxial Planar Transistor
for low-frequency power and stroboscope
applications.
The transistor is subdivided into three
groups P, Q and R, according to its DC
current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
․Low collector-emitter saturation voltage
․Satisfactory operation performances at high
efficiency with the low voltage power supply
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25^oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_CP
I_C
P_tot
T_j
T_S
40
20
7
8
5
750
150
-55 to +150
V
V
V
A
A
mW
O_C
O_C