2SC4375 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
2SC4375 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z Low Collector- Emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=30V,I_E=0
V_EB=5V,I_C=0
V_CE=2V, I_C=500mA
I_C=1.5A,I_B=30mA
V_CE=2V, I_C=500mA
VCE=2V,IC=500mA
V_CB=10V, I_E=0, f=1MHz
Min Typ Max Unit
30
V
30
V
5
V
0.1
µA
0.1
µA
100
320
2
V
1
V
120
MHz
40
pF
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
O
100–200
GO
Y
160–320
GY
A,Nov,2010