2SC2383 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFLECTION, CLASS B SOUND OUTPUT APPLICATIONS)

DONGGUAN NANJING ELECTRONICS LTD.,
TO-92L Plastic-Encapsulate Transistors
2SC2383 TRANSISTOR (NPN)
FEATURE
y High Voltage: V_CEO=160V
y Large Continuous Collector Current Capability
y Complementary to 2SA1013
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
160
160
6
1
0.75
150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
I_CBO
I_CER
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE
f_T
Test conditions
I_C= 100μA , I_E=0
I_C= 10mA, I_B=0
I_E= 10μA, I_C=0
V_CB=150V, I_E=0
V_CB=150V,R_EB= 10MΩ
V_EB=6V, I_C=0
V_CE=5V, I_C=200mA
V_CE=5V, I_C=10mA
I_C=500m A, I_B=50mA
I_C=5mA, V_CE= 5V
V_CE=5V, I_C=200mA
Min
160
160
6
60
40
20
Unit
V
V
V
A
W
℃
℃
Max
Unit
V
V
V
1
μA
10
μA
1
μA
320
1
V
0.75
V
MHz
CLASSIFICATION OF h_FE1
Rank
Range
R
60-120
O
100-200
Y
160-320