2SC1766 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN)

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
2SC1766 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
Small Flat Package
High Speed Switching Time
Low Collector-emitter saturation voltage
APPLICATIONS
Power Amplifier
MAXIMUM RATINGS (T_a=25 unless otherwise noted)
Symbol
VCBO
V_CEO
V_EBO
I_C
P_C
R _JA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
250
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (T_a=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)*
VCE(sat)
VBE(sat)
f_T
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A,IB=50mA
IC=1A,IB=50mA
VCE=2V,IC=0.5A,f=100MHz
Min Typ
50
50
5
20
120
Max
0.1
0.1
0.5
1.2
Unit
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF h_FE(1)
RANK
P
RANGE
82 180
MARKING
P1766
*Pulse test: pulse width 300 s, duty cycle 2.0%.
Q
120 270
Q1766
Y
180 390
Y1766