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| 2SB624 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
2SB624 TRANSISTOR (PNP)
FEATURES
z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)
z Complimentary to 2SD596.
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-700
mA
PD
Total Device Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE*
fT
Cob
IC=-100μA,IE=0
IC= -1mA, IB=0
IE= -100μA, IC=0
VCB=-30 V , IE=0
VEB= -5V , IC=0
VCE= -1V,IC= -100mA
VCE=-1V,IC= -700mA
IC=-700 mA, IB= -70mA
VCE=-6V, IC=-10mA
VCE= -6V,IC= -10mA
VCB=-6V,IE=0,f=1MHZ
-30
-25
-5
110
50
-0.6
V
V
V
-0.1 μA
-0.1 μA
400
-0.6 V
-0.7 V
160
MHz
17
pF
* Pulse test : Pulse width â¤350μs,Duty Cycleâ¤2%.
CLASSIFICATION OF hFE(1)
Marking
BV1
Range
110-180
BV2
135-220
BV3
170-270
BV4
200-320
BV5
250-400
A,May,2011
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