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| 2SA1213 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
2SA1213 TRANSISTOR (PNP)
FEATURES
z Complementary to 2SC2873
z Small Flat Package
z Power Amplifier and Switching Applications
z Low Saturation Voltage
z High Speed Switching Time
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= -0.1mA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-100
nA
DC current gain
hFE
VCE=-2V, IC=-500mA
70
240
VCE=-2V, IC=-2A
20
Collector-emitter saturation voltage
VCE(sat) IC=-1A,IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC=-1A,IB=-50mA
-1.2
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
40
pF
Transition frequency
fT
VCE=-2V,IC= -0.5A
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
70â140
NO
Y
120â240
NY
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