2N7002K Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate MOSFETS
2N7002K ^{MOSFET (N-Channel)}
FEATURES
z High density cell design for low R_DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
V_DS
60
Continuous Drain Current
I_D
0.115
Power Dissipation
P_D
0.225
Thermal Resistance from Junction to Ambient
R_θJA
556
Junction Temperature
T_J
150
Storage Temperature
T_stg
-50 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
V_(BR)DSS
V_th(GS)
l_GSS
I_DSS
I_D(ON)
Drain-Source On-Resistance
RDS(on)
Forward Trans conductance
g_fs
Drain-source on-voltage
V_DS(on)
Diode Forward Voltage
Input Capacitance _*
Output Capacitance *
Reverse Transfer Capacitance *
SWITCHING TIME
Turn-on Time _*
Turn-off Time *
V_SD
C_iss
Coss
C_rss
t_d(on)
t_d(off)
*These parameters have no way to verify.
V_GS=0 V, I_D=250 µA
V_DS=V_GS, I_D=250 µA
V_DS=0 V, V_GS=±25 V
V_DS=60 V, V_GS=0 V
V_GS=10 V, V_DS=7 V
V_GS=10 V, I_D=500mA
V_GS=5 V, I_D=50mA
V_DS=10 V, I_D=200mA
V_GS=10V, I_D=500mA
V_GS=5V, I_D=50mA
I_S=115mA, V_GS=0 V
V_DS=25V, V_GS=0V, f=1MHz
V_DD=25 V, R_L=50Ω,
I_D=500mA,V_GEN=10 V
R_G=25Ω
Unit
V
A
W
℃/W
℃
Min
60
1
500
80
0.5
0.05
0.55
Typ Max
Unit
V
̀
±80
nA
80
nA
mA
7
Ω
7
ms
3.75
V
0.375
V
1.2
V
50
25
pF
5
20
ns
40
D,Apr,2012